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ts 12011/ts12012 page 1 ? 2012 touchstone semiconductor, inc. all rights reserved. features ? nanopower op amp, comparator, and 0.58 v reference in single 4 mm 2 package ? ult ra low total supply current: 1.6 a (max) ? supply voltage operation: 0.8v to 2.5v ? internal 0.58 v reference ? op amp and comparator input ranges are rail - to - rail ? unity - gain stable op amp with a v ol = 104 db ? op amp output: rail - to - rail and phase - reversal - free ? internal 7.5mv comparator hysteresis ? 20s comparator propagation delay ? resettable latched comparator ? TS12011: push - pull rail - to - rail output stage with crowbar - current free switching ? ts12012: open - drain output stage for wired - or or mixed - voltage system applications applications low - frequency, local - area alarms/detectors smoke detectors and safety sensors infrared receivers for remote controls instruments, terminals, and bar - code readers battery - powered systems smart - card readers description t he TS12011/ts12012 combine a 0.58 v reference, a 20s analog comparator, and a unity - gain stable operational amplifier in a single package. all three devices operate from a single 0.8v to 2.5v power supply and consume less than 1.6 a total supply current. optimized for ultra - long life, sin gle - cell and battery - powered applications, these devices expand touchstones growing nanowatt analog? high - performance analog integrated circuits portfolio. both the analog comparator and the op amp feature rail - to - rail input stages. the analog comparat or exhibits 7.5mv of internal hysteresis for clean, chatter - free output switching. the internal reference was designed to sink or source up to 0.1a load currents. when compared against similar products, the TS12011 and the ts12012 offer a factor - of - 20 lo wer power consumption and at least a 55% reduction in pcb area. the ts 12 0 11 and the ts12012 are fully specified over the - 40c to +85c temperature range and each is available in a low - profile, 10 - pin 2x2mm tdfn package with an exposed back - side paddle. a 0.8v/1.5a nanopower op amp, comparator, and reference typical application circuit t he touchstone semicondu c tor logo and nanowatt analog are registered trademark s of touchstone semiconductor, incorporated. p ilot light flame detector with low - battery lockout circuit part number comparator output stage TS12011 push - pull ts12012 open - drain
TS12011/ts12012 page 2 TS12011_12ds r1p0 rtfds absolute maximum rat ings supply voltage (v dd to v ss ) ............ ................................ ..... +2.75 v input voltage ampin+, ampin - ..v ss C 0.3v to v dd + 0.3v compin+ , compin - ............... .... .. . .. .. v ss C 0.3v to v dd + 0.3v t .. ... v ss - 0.3v to +5.5v output voltage ampout , ref out . . .. ..v ss C 0.3v to v dd + 0.3v compout ( TS12011) ....... . . v ss - 0.3v to v dd + 0.3 v compout ( ts12012) ... .. . v ss - 0.3v to +5.5v differential input voltage (am pin, compin )................ ........ 2.75 v output current ampout, ompout.. ............. . ......... .. .... 5 0 ma short - circuit duration (refout, ampout, compout )... . c ontinuous continuous power dissipation (t a = +70c) 10 - pin tdfn (derate at 13.48 mw/c above +70c) ......... 1078 mw operating temperature range ................................ - 40c to +85c junction temperature..+150 c storage temperature range ................................ . - 65c to +150c lead temperature (s oldering, 10s) ................................ ..... +300c electrical and thermal s tresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. these are stress ratings only and functional operation of the device at these or any other condition beyond those indicated in the operational sections of the specifications is not implied. exposure to any absolute maximum rating conditions for extended p eriods may affect device reliability and lifetime . package/ordering information order number part marking carrier quantity order number part marking carrier quantity ts 12011 itd 10 22t p aa l tape & reel ----- ts 12 0 12 itd 10 22t p aa m tape & reel ----- ts 12 0 11 itd 10 22t tape & reel 3000 ts 12 0 12 itd 10 22t tape & reel 3000 lead - free program: touchstone semico nductor supplies only lead - free packaging. consult touchstone semiconductor for products specified with wider operating temperature ranges.
TS12011/ts12012 TS12011_12ds r1p0 page 3 rtfds electrical character istics v dd = 0.8 v; v ss = 0v ; v compin+/ - = 0v; v ampin +/ - = 0v; v ampout = (v dd + v ss )/2; v compout = hiz ; t a = - 40c to +85c, unless otherwise noted. typical values are at t a = +25c. see note 1. parameter symbol conditions min typ max units supply voltage v dd 0. 8 2.5 v supply current i dd refout = open t a = +25c 1 . 1 1. 6 a - 40c a reference section reference output voltage v ref out t a = +25c 5 55 577 6 00 mv - 40c a out = 100na 0.5 % amplifier section input offset voltage v os v ampin +/ - = v dd or v ampin +/ - = v ss t a = +25c 3.5 mv - 40 t a 85 in+ , i n - v ampin+, v ampin - = (v dd C ss )/2 20 na input offset current i os v ampin+, v ampin - = (v dd C ss )/2 0.01 5 na input common - mode range ivr guaranteed by input offset voltage test v ss v dd v large - signal voltage gain a vol r l = 100k to v dd /2 ; v ss + 50mv < v out < v dd - 50mv 90 104 db gain - bandwidth product gbwp r l = 100k m r l = 100k l = 100k in(cm) dd = 2.5v 50 75 db power - supply rejection ratio psrr 0. 65 v dd - v ss ) oh r l = 100k to v ss v dd C ol r l = 100k to v dd v ss + 50mv v output source current i sc+ v ampout = v ss 0.2 8 ma output sink current i sc - v ampout = v dd 4.5 ma output load capacitive drive c out 50 pf comparator section input offset voltage v os v ampin +/ - = v dd ; v ampin +/ - = v ss ; see note 2 t a = +25c 4.5 mv - 40 t a 85 hb see note 3 7.5 mv input bias current i in+ , i n - v compin+, v compin - = v dd or v ss 20 na input offset current i os v compin+, v compin - = v dd or v ss 0.2 5 na input voltage range ivr guaranteed by input offset voltage test v ss v dd v common - mode rejection ratio cmrr 0v in(cm) dd = 2.5v 50 60 db power - supply rejection ratio psrr 0.8v dd - v ss ) pd+ v overdrive = 10mv; see note 4 TS12011 30 s v overdrive = 1 0 0mv; see note 4 20 s high - to - low propagation delay t pd - v overdrive = 10mv; see note 4 30 s v overdrive = 10 0 mv; see note 4 20 s output high voltage v oh TS12011 ; i out = - 100a dd C ol TS12011 ; i out = 100a ss + 0.1 v output low voltage v ol ts12012 ; i out = 100a ss + 0.11 v output short - circuit current i sc sourcing; v compout = v ss 0.1 ma TS12011 ; sinking; v compout = v dd 0.5 ma ts12012 ; sinking; v compout = v dd 1.4 ma open drain leakage ts12012 ; v compout = 5v 20 na
TS12011/ts12012 page 4 TS12011_12ds r1p0 rtfds v dd = 0.8 v, v ss = 0v , v compin+/ - = 0v, v ampin +/ - = 0v, v ampout = (v dd + v ss )/2, v compout = hiz. t a = - 40c to +85c, unless otherwise noted. typical values are at t a = +25c. see note 1. parameter symbol conditions min typ max units control pin section t il comparator latched output enabled 0.8v dd dd t ih comparator latched output disabled 0.8v dd dd - 0.1 v 1.1 v < v dd t v t ss ; v t note 1: all devices are 100% production tested at t a = +25c and are guaranteed by characterization for t a = t min to t max , as specified. note 2 : v os is defined as the center of the hysteresis band at the input. note 3 : the hysteresis - related trip points are defined by the edges of the hysteresis band and measured with respect to the center of the hysteresis band (i.e., v os ). note 4 : the propagation delays are specified with an output load capacitance of c l = 15pf. v overdrive is defined above and is beyond the offset voltage and hysteresis of the comparator input.
TS12011/ts12012 TS12011_12ds r1p0 page 5 rtfds pin functions pin name function 1 ampout amplifier output 2 ampin - amplifier inverting input 3 ampin+ amplifier non - inverting input 4 vss negative supply voltage. 5 t latch enable pin. when t is set high , the output of the comparator will toggle normally based on the inputs to the comparator. for instance, w hen t is set low and the TS12011 output is high, the output will remain high despite any changes to the input of the comparator. the output will once again respond to changes to the input when t is toggled high. if the output of the comparator is initially low a nd the t is then low, the output will stay low. if a low - to - high transition occurs on the output, the output will switch to high and stay high and not respond to any changes at the input. the t pin must always be set to a known state. the t s12012 output is the inverte d version of the t s12011 output . for unlatched comparator operation, set t to high. 6 compin+ comparator non - inverting input 7 refout 0.58 v reference output 8 compin - comparator inverting input 9 compout comparator output .TS12011 has a push - pull output stage. ts12012 has an open - drain output stage. 10 v dd positive supply voltage. connect a 0.1f bypass capacitor from this pin to analog vss/ gnd. ep ---- exposed paddle is electrically connected to vss/ gnd.
TS12011/ts12012 page 6 TS12011_12ds r1p0 rtfds block diagram theory of operation the TS12011 and ts12012 combine a 0.58 v 4.5% reference, a 20s analog comparator, and a unity - gain stable operational amplifier in a single package. all three devices operate from a single 0.8v to 2.5v power supply and consume less than 1.6 a total supply current. the TS12011 comparator has a push - pull output stage while the ts12012 comparator has an open - drain output stage that allows for easy output voltage level translation as can occur when driving systems powered with a different power supply rail. both the analog comparator and the op amp feature a common mode input range from v ss to v dd . the analog comparator exhibits 7.5mv of internal hysteresis for clean, chatter - free output switching. the internal reference was designed to sink or source up to 0.1a load currents . the TS12011 and the ts12012 ha ve a latch enable pin t that allows the output of the comparator to latch to either a high or low state under certain conditions. if t is set high , the compout out put will respond to the applied comparator input . h owever , when t is set low and the TS12011 output is high, compout will remain high until t toggles low. when compout is initially low i nstead, compout will latch high and remain high on a low - to - high transition at the input of the comparator until t goes high . the t s12012 output is the inverte d version of the t s12011 output . the t pin must not be left open and should be c onnect ed to v dd for normal unlatched operation or to v ss for latched operation . op amp the TS12011 and ts12012 have a unity - gain stable op - amp with a gbwp of 15 k hz , a slew rate of 6v/ms, and can drive a capacitive load up to 50pf. the common mode input voltage range extends from v ss to v dd and the input bias current and
ts 12011/ts12012 TS12011_12ds r1p0 page 7 rtfds input offset current are less than 20na and 2na, respectively. comparator the TS12011 and ts12012 analog comparat or input stage is robust as it can tolerate input voltages 300mv beyond the power supply rails. to insure clean output switching behavior, the analog comparator features 7.5mv internal hysteresis. the TS12011 push - pull output driver was designed to minimize supply - current surges while driving 100 a loads with an outp ut swing to within 100mv of the supply rails . the open drain output stage ts12012 can be connected to supply voltages above v dd to an absolute maximum of 5.5 v above v ss . whe re wired - or logic connections are needed, the open - drain output stage make s it easy to use this analog comparator. the TS12011 and the ts12012 can sink 0.5 ma and 1.4 ma of current , respectively . the TS12011 can source 0.1 ma of current. reference the TS12011 and ts12012 on - board 0.58 v 4.5% reference voltage can source and sink 0.1 a and 0 .1a of current and can drive a capacitive load less than 50pf and greater than 50 nf with a maximum capacitive load of 2 50n f. the higher the capacitive load, the lower the noise on the reference voltage and the longer the time needed for the reference voltage to respond and become availa ble on the refout pin. with a 250 n f capacitive load, the reference voltage will settle to within specifications in approximately 20ms. op - amp stability the TS12011 and ts12012 op - amp is able to drive up to 50pf of capacitive load and still maintain stability in a un ity - gain configuration with a 15 khz gbwp and a phase margin of 70 degrees with a 100k//20p output load . thoug h the TS12011 and ts12012 address low frequency applications, it is essential to perform good layout techniques in order to minimize board leakage and stray capacitance, which is of a concern in low power, high impedance circuits. for instance, a 10m resistor c oupled with a 1pf stray capacitance can lead to a pole at approximately 15 khz, which is the gbwp of the device. if stray capacitance is unavoidable, a feedback capacitor can be placed in parallel with the feedback resistor. applications information comparator hysteresis as a result of circuit noise or unintended parasitic feedback, many analog comparators often break into oscillation within their linear region of operation especially when the applied differential input voltage approaches 0v (zero volt). externally - introduced hysteresis is a well - established technique to stabilizing analog comparator behavior and requires external components. as shown in figure 1, adding comparator hysteresis creates two trip points: v thr (for th e rising input voltage) and v thf (for the falling input voltage). the hysteresis band (v hb ) is defined as the voltage difference between the two trip points. when a comparators input voltages are equal, hysteresis effectively forces one comparator input t o move quickly past the other input, moving the input out of the region where oscillation occurs. figure 1 illustrates the case in which an in - input is a fixed voltage and an in+ is varied. if the input signals were reversed, the figure would be the same with an inverted output. to save cost and external pcb area, an internal 7.5mv hysteresis circuit was added to the TS12011 and ts12012. adding hysteresis to the TS12011 push - pull output option additional hysteresis can be generated with three external resistors using positi ve feedback as shown in figure 2. unfortunately, this method also reduces the hysteresis response time. the procedure to calculate the resistor values for the TS12011 is as follows: figure 1. TS12011/ts12012 threshold hyesteresis band
TS12011/ts12012 page 8 TS12011_12ds r1p0 rtfds 1) setting r2. as the leakage current at the in pin is less than 2 0 na, the current through r2 should be at least 150n a to minimize offset voltage errors caused by the input leakage current. the c urrent through r2 at the trip point is (v ref out - v compout )/r2. in solving for r2, there are two formulas C one each for the two possible output states: r2 = v ref out /i r2 or r2 = (v dd - v ref out )/i r2 from the results of the two formulae, the smaller of the two resulting resistor values is chosen. for example, when using the TS12011 (v ref out = 0.58 v) at a v dd = 2.5 v and if i r2 = 150n a is chosen, then the formulae above p roduce two resistor values: 3.87 m and 12.8m - a 4.02m standard value for r2 is selected. 2) next, the desired hysteresis band (v hysb ) is set. in this example, v hysb is set to 100mv. 3) resistor r1 is calculated according to the following equation: r1 = r2 x (v hysb /v dd ) and substituti ng the values selected in 1) and 2) above yields: r1 = 4.02m x (100mv/2.5 v) = 160.8 k. the 160 k standard value for r1 is chosen. 4) the trip point for compin+ rising (v thr ) is chosen such that v thr > v ref out x (r1 + r2)/r2 (v thf is the trip point for v compin+ falling). this is the threshold voltage at which the comparator switches its output from low to high as v compin+ rises above the trip point. in this example, v thr is set to 2 . 5) with the v thr from step 4 above, resistor r3 is then computed as follo ws: r3 = 1/[v thr /(v ref out x r1) - (1/r1) - (1/r2)] r3 = 1/[2v/(0.58 v x 160k ) - (1/160k) - (1/4.02m)] = 66.43 k in this example, a 69.8 k, 1% standard value resistor is selected for r3. 6) the last step is to verify the trip voltages and hysteresis band using the standard resistance values: for v compin+ rising: v thr = v ref out x r 1 [ (1/r1) + (1/r2) + (1/r3)] = 1.93 v for v compin+ falling: v thf = v thr - (r1 x v dd /r2) = 1.83 v and hysteresis band = v thr C v thf = 100mv figure 2 . using three resistors introduces additional hysteresis in the TS12011
ts 12011/ts12012 TS12011_12ds r1p0 page 9 rtfds adding hysteresis to the ts12012 open - drain option the ts12012 has open - drain output and requires an external pull - up resistor to v dd as shown in figure 3. additional hysteresis can be generated using positive feedback; however, the formulae differ slightly from those of the push - pull option TS12011 . the procedure to calculate the r esistor values for the ts12012 is as follows: 1) as in the previous section, resistor r2 is chosen according to the fo rmulae: r2 = v ref out / 150n a or r2 = (v dd - v ref out )/ 150n a - r4 where the smaller of the two resulting resistor values is the best starting value. 2) as before, the desired hysteresis band (v hysb ) is set to 100mv. 3) next, resistor r1 is then computed according to the following equation: r1 = (r2 + r4) x (v hysb /v dd ) 4) the trip point for v compin+ rising (v thr ) is chosen (again, remember that v thf is the trip point for v compin+ falling). this is the threshold voltage a t which the comparator switches its output from low to high as v compin+ rises above the trip point. 5) with the v thr from step 4 above, resistor r3 is computed as follows: r3 = 1/[v thr /(v refout x r1) - (1/r1) - (1/r2)] 6) as before, the last step is to verify the trip voltages and hysteresis band with the standard resistor values used in the circuit: for v compin+ rising: v thr = v ref out x r1 x (1/r1+1/r2+1/r3) for v comp in+ falling: v thf = v ref out x r1 x (1/r1+1/r3+1/(r2+r4)) - (r1/(r2+r4)) x v dd and hysteresis band is given by v thr C v thf pilot light flame detector with low - battery lockout circuit the TS12011 can be used to create a pilot flame detector with low - battery lockout circuit as shown in figure 4. the circuit is able to detect when the thermocouple does not detect the pilot flame and when the battery in the cir cuit drops to 1.39v . this cir cuit makes use of the op - amp, comparator, and 0.58v reference in the TS12011 . in this example, a typ e r thermocouple is used. it generates a voltage range from 9 mv to 17mv that corresponds to a temperature range of 900oc to 1500oc, which is typical of a methane pilot flame. if the pilot flame is removed , the temperature drops; hence, the output voltage generated by the thermocouple is drops to a minimum voltage of 0.1 mv that is applied to the non - inverting input of the op - amp. this switches the o utput voltage of the op - amp to a low state and in turn, switch es q1 off . if, however, the battery voltage drops from 1.5v to 1.39 v, the comparator output will switch from an output high t o a low. this will turn off q2 and the output of the op - amp will turn q1 off . th e complete ci rcuit consumes approximately 95 a of supply current at v dd = 1.5 v. pc board layout and power - supply bypassing while power - supply bypass capacitors are not typically required, it is good engineering practice to use 0.1u bypass capacitors close to the devices power supply pins when the power supply impedance is high, the power supply leads are long, or there is ex cessive noise on the power supply traces. to reduce stray capacitance, it is also good engineering practice to make signal trace lengths as short as figure 3. using four resistors introduces additional hysteresis in the ts12012
TS12011/ts12012 page 10 TS12011_12ds r1p0 rtfds possible. also recommended are a ground plane and surface mount resistors and capacitors. input noise rad iated noise is common in low power circuits that require high impedance circuits. to minimize this effect, all traces between the inputs of the comparator or op - amp and passive component networks should be made as short as possible. figure 4 . pilot light flame detector with low - battery lockout circuit
TS12011/ts12012 touchstone semiconductor, inc. page 11 630 alder drive, milpitas, ca 95035 TS12011_12ds r1p0 +1 (408) 215 - 1220 ? www.touchstonesemi.com rtfds p ackage outline drawing information furnished by touchstone semiconductor is believed to be accurate and reliable. however, touchstone semiconductor does not assume any responsibility for its use nor for any infringements of patents or other rights of third parties that may result from its use , and all information provided by touchstone semiconductor and its suppliers is provided on an as is basis, without warranty of any kin d . touchstone semiconductor reserves the right to ch ange product specifications and product descriptions at any time without any advance notice. no license is granted by implication or otherwise under any patent or patent rights of touchstone semiconductor. touchstone semiconductor assumes no liability for applications assistance or customer product design. customers are responsible for their products and applications using touchstone semiconductor components. to minimize the risk associated with customer products and applicatio ns, customers should provide a dequate design and operating safeguards. trademarks and registered trademarks are the property of their respective owners. 10 - pin tdfn22 package o utline drawing (n .b., drawings are not to scale) 0 . 2 0 0 0 . 0 5 0 b o t t o m v i e w 2 . 0 0 0 0 . 0 5 0 2 . 0 0 0 0 . 0 5 0 t o p v i e w 1 0 l s t s l p ( 2 x 2 m m ) p i n 1 d o t b y m a r k i n g p i n # 1 i d e n t i f i c a t i o n 0 . 1 5 2 r e f a 0 . 0 0 0 - 0 . 0 5 0 n o t e ! a l l d i m e n s i o n s i n m m . t h i s p a r t i s c o m p l i a n t w i t h j e d e c m o - 2 2 9 s p e c a m a x . n o m . m i n . 0 . 6 0 0 0 . 5 5 0 0 . 5 0 0 s i d e v i e w 0 . 9 0 0 0 . 0 5 0 e x p . d a p 1 . 4 0 0 0 . 0 5 0 e x p . d a p 0 . 3 0 0 0 . 0 5 0 0 . 4 0 0 b s c

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